Conferences

Refereed Conference Proceedings (chronological order):

  1. Bernstein, J.B., Bahl, S., Schlecht, M.F., “A Low Capacitance Power MOSFET With an Integral Gate Driver," Proceeding of the 18th Annual IEEE Power Electronics Specialists Conference, PESC vol. 87, pp. 704, 61-8 (Virginia 1987)
  2. Cooke, C.M., Wright, K.A., Takasu, N., Bernstein, J.B., Gollin, E., “Calibration of Volume Charge Measurements By Use of Electron Beam Implantation," 1989 Annual Report. Conference on Electrical Insulation and Dielectric Phenomena, pp. 508, 435-41 (Virginia 1989)
  3. Bernstein, J.B., Cohen, S.S., Wyatt, P.W., "Fatigue of aluminum films leading to melting by multiple laser pulses," Phase Formation and Modification by Beam-Solid Interactions Symposium,MRS pp. 589-93 (Boston 1991)
  4. Bernstein, J.B., Gleason, E.F., Wyatt, P.W., "A thermally stable silicon rich amorphous silicon nitride alloy for electronic device applications," Amorphous Silicon Technology Symposium, MRS pp. 667-72 (California 1992)
  5. Bernstein, J.B., Gleason, E.F., Wyatt, P.W., "High density metal cross-point laser linking," International Conference on Wafer Scale Integration Proceedings, pp. 176-81 (California 1992)
  6. Bernstein, J.B., Gleason, E.F., Wetsel, A.E., Liu, E.Z., Wyatt, P.W., "Anomalous Behavior of Semi-insulating Silicon Rich Amorphous Silicon Nitride," Amorphous Insulating Thin Films Symposium, MRS pp. 113-18 (Massachusetts 1993)
  7. Bernstein, J.B., "Dielectric fracture leading to metallic connections employing a lateral link structure," Thin Films: Stresses and Mechanical Properties V. Symposium, MRS pp. 833-7 (Massachusetts 1994)
  8. Bernstein, J.B., Ventura, T.M., Radomski, A.T., "Laser induced microfracture leading to high density metal-to-metal connections," Proceedings of the SPIE, The International Society for Optical Engineering, pp. 165-76 (Texas 1994)
  9. Bernstein, J.B., "Laser Formed Lateral Metallic Connections," Proceedings of the Second International Conference on Beam Processing of Advanced Materials, pp. 101-104 (Ohio 1995)
  10. Chen, Y., Suehle, J.S., Shen, C.C., Bernstein, J.B., Messick, C., "A New Technique to Extract TDDB Acceleration Parameters from Fast Qbd Tests," Proceedings of International Integrated Reliability Workshop, pp. 67-69, (Nevada 1997)
  11. Chen, Y., Suehle, J.S., Shen, C.C., Bernstein, J.B., Messick, C., Chaparala, P., "The correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides," 1998 IEEE International Reliability Physics Symposium Proceedings. 36thAnnual, pp. 87-91 (California 1998)
  12. Bernstein, J.B., Zhang, W., Nicholas, C.H., "Laser formed connections for programmable wiring," Proceedings of the IEEE 1998 Custom Integrated Circuits Conference, pp. 608, 163-5 (California 1998)
  13. Bernstein, J.B., Zhang, W., Nicholas, C.H., "Laser programmable metallic vias," Proceedings of the IEEE 1998 International Interconnect Technology Conference, pp. 304, 205-7 (New York 1998)
  14. Chen, Y, Suehle, J.S., Shen, C.C., Bernstein, J.B., Messick, C., Chaparala, P., "The correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides," 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual, pp. vii+421, 87-91 (Nevada 1998)
  15. Shen, C.C., Kefner, A.R., Jr., Berning, D.W., Bernstein, J.B., "Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions," Conference Record of 1998 IEEE Industry Applications Conference, p. 3, vol. xxx+2410, 831-9, vol. 2 (New York 1999)
  16. Zhang, W., Bernstein, J.B., "Electromigration simulation under DC/AC stresses considering microstructure," Proceedings of the IEEE 1999 International Interconnect Technology Conference, pp. 295, 41-3 (California 1999)
  17. Suehle, J.S., Vogel, E., Wang, B., Bernstein, J.B., "Temperature Dependence of Soft Breakdown and Wear-Out in Sub-3 nm SiO2 Films," International Reliability Physics Symposium - Conference Proceedings, pp. 33-9 (California 2000)
  18. E. M. Vogel, M. D. Edelstein, C. A. Richter, N. V. Nguyen, I. Levin, D. L. Kaiser, H. Wu, and J. Bernstein, "Issues in High-? Gate Dielectrics for Future MOS Devices", Proceedings of IEEE Microelectronics Reliability Qualification Workshop (California 2000)
  19. B. Wang, J. Suehle, E.M. Vogel, J.B. Bernstein, "The Effect of Stress Interruption and pulsed bias stress on Ultra-Thin Gate Dielectric Reliability," Proceedings of Integrated Reliability Workshop (California 2000)
  20. J. Lee, G. Zhuo and J.B. Bernstein, "Laser Programmable Multichip Module using Vertical Make-link," Proceedings of the IEEE Electronic Components and Technology Conference, pp 932-936 (Nevada 2000)
  21. Vogel, E., Suehle, J.S., Edelstein, M.D., Wang, B., Chen, Y., Bernstein, J.B., "Degradation of Ultra-thin SiO2 Under Combined Substrate Hot Electron and Tunneling Stress," Semiconductor Interface Specialists Conference, (California 2000)
  22. J.S. Suehle, et.al … J.B. Bernstein, "Challenges of high-k gate dielectrics for future MOS devices," 6th International Symposium on Plasma and Process Induced Damage, pp. 90-93 (California 2001)
  23. B. Wang, J.B. Bernstein, "Latent Reliability Degradation of Ultra-Thin Oxides After Heavy Ion and Gamma Irradiation," Proceedings of Integrated Reliability Workshop (California 2001)
  24. Bernstein, J.B. and Lee, J, "A Laser Formed MakeLink for Customization and Repair," Proceedings of IEEE International Symposium on Semiconductor Manufacturing, pp. 347-350 (California 2001)
  25. Z. Gao, J. Luo, Hu Huang, W. Zhang, J.B. Bernstein, "Reliable laser programmable gate array technology," Proceedings of International Symposium on Quality Electronic Design, pp. 252-256 (Califorinia 2002)
  26. Ji Luo, K. Chung, Hu Huang, J.B. Bernstein, "Comparison of Silicon Carbide Schottky diodes," Proceedings of 2001 GaAs Reliability Workshop (Virginia 2001)
  27. Ji Luo, Kuan-Jung Chung, Hu Huang, J.B. Bernstein, "Temperature Dependence of R(on,sp) in Silicon Carbide and GaAs Schottky diodes," Proceedings of IEEE International Reliability Physics Symposium, 40th annual (New Jersey 2002)
  28. Zhuo Gao, Ji Luo, Hu Huang, Wei Zhang, J.B. Bernstein, "Reliable laser programmable gate array technology," Proceedings International Symposium on Quality Electronic Design, p. 252-6, Los Alamitos (California 2002)
  29. D. Heh, J.B. Bernstein, E.M. Vogel, "Defect generation in ultra-thin oxide over large fluence ranges," Proceedings of Integrated Reliability Workshop, Lake Tahoe (Nevada 2002)
  30. X. Zhang, N. Goldsman, J.B. Bernstein, J.M. McGarrity, “Numerical and Experimental Characterization of 4H-SiC Schottky Diodes,” Proceedings of IEEE International Semiconductor Device Research Symposium, p. 120-1 (2003)
  31. M. White, M. Cooper, Y. Chen, J. Bernstein, "Impact of Junction Temperature on Microelectronic Device Reliability and Considerations for Space Applications," Proceedings of Integrated Reliability Workshop, p. 133-6 (Nevada 2003)
  32. B. Zhu, J.B. Bernstein, J. Suehle, "Negative bias temperature instability of deep sub-micron p-MOSFETs under pulsed bias stress," Proceedings of Integrated Reliability Workshop, pp. 125-9 (Nevada 2003)
  33. Y. Chen, D. Nguyen, S. Guertin, J.B. Bernstein, M. White, R. Menke, S. Kayali, “A Reliability Evaluation Methodology for Memory Chips for Space Applications when Sample Size is Small,” Proceedings of Integrated Reliability Workshop, Lake Tahoe (Nevada 2003)
  34. B. Zhu, J.S. Suehle, J.B. Bernstein, “Mechanism for reduced NBTI effect under pulsed bias stress conditions,” Proceedings of Integrated Reliability Workshop, Phoenix (Arizona 2004)
  35. J.S. Suehle, B. Zhu, Y. Chen, J.B. Bernstein, “Acceleration factors and mechanistic study of progressive breakdown in small area ultra-thin gate oxides,” Proceedings of Integrated Reliability Workshop, Phoenix (Arizona 2004)
  36. Ji Luo; Bernstein, J.B.; Tuchman, J.A.; Hu Huang; “A high performance radiation-hard field programmable analog array.” Proceedings. 5th International Symposium on Quality Electronic Design. p. 522-7. (Los Alamitos, CA, 2004)
  37. Hu Huang, Joseph B. Bernstein, Martin Peckerar, Ji Luo; “Combined Channel Segmentation and Buffer Insertion for Routability and Performance Improvement of Field Programmable Analog Arrays,” Proceedings of the IEEE International Conference on Computer Design (October 2004)
  38. Xiaojun Li; Walter, J.D.; Bernstein, J.B.; “Simulating and Improving Microelectronic Device Reliability by Scaling Voltage and Temperature,” Quality of Electronic Design, 2005. ISQED 2005. Sixth International Symposium, pp.496 - 502 (March 2005)
  39. Xiaojun Li; Huang, B.; Qin, J.; Zhang, X.; Talmor, M.; Gur, Z.; Bernstein, J.B.; “Deep Submicron CMOS Integrated Circuit Reliability Simulation with SPICE,” Quality of Electronic Design, 2005. ISQED 2005. Sixth International Symposium on, pp. 382 - 389 (March 2005)
  40. Zhu, B.; Suehle, I.S.; Vogel, E.; Bernstein, J.B.; “The contribution of HFO2 bulk oxide traps to dynamic NBTI in pMOSFETs,” IEEE International Reliability Physics Symposium 2005 Proceedings, pp. 533 – 537 (April 2005)
  41. Kuan-Jung Chung; Bernstein, J.B.; Ji Luo; Tuchman, J.A.; Ma, Z.K.; “Experimental Study for Low Resistance Interline Connections Using Pulsed Laser Techniques,” Quantum Electronics and Laser Science 2005, Conference Volume 3, pp.1564 - 1566 (May 2005)
  42. Bing Huang; Xiaojun Li; Ming Li; Bernstein, J.; Smidts, “Study of the impact of hardware fault on software reliability,” Proceedings. 16th IEEE International Symposium on Software Reliability Engineering. Chicago, IL, USA (Nov. 2005)
  43. M. Gurfinkel, J. Suehle, J.B. Bernstein, Y. Shapira, A.J. Lelis, D. Habersat, N. Goldsman, "Ultra-Fast Measurement of Vth Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress", 2006 International Integrated Reliability Workshop (IIRW) Final Report, pp. 49-53 (October 2006).
  44. M. White, C. Vu, C. Nguyen, R. Ruiz, Y. Chen, J.B. Bernstein, “Product Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOS,” 2006 International Integrated Reliability Workshop (IIRW) Final Report, pp. 156-159 (October 2006).
  45. J. Qin, J.B. Bernstein, “Non-Arrhenius Temperature Acceleration and Stress-Dependent Voltage Acceleration for Semiconductor Devices Involving Multiple Failure Mechanisms,” 2006 International Integrated Reliability Workshop (IIRW) Final Report, pp. 93-97 (October 2006).
  46. Bernstein, J. B., “Reliability Qualification at the Maryland-Israel Center for Product Realization,” Proceedings of 16th International Conference of the Israel Society for Quality, pp. 9.2.01 Tel Aviv (November 2006).
  47. M. Gurfinkel, J. Suehle, J.B. Bernstein, Y. Shapira, "Enhanced Gate Induced Leakage Current in HfO2 MOSFETs due to Remote Interface Trap-Assisted Tunneling", 2006 International Electron Devices Meeting (IEDM) technical digest, pp. 755-758, (Dec 2006).
  48. L. Condra, J. Qin and J.B. Bernstein, “State of the Art Semiconductor Devices in Future Aerospace Systems,” Proceedings of the FAA/NASA/DoD Joint Council on Aging Aircraft Conference, Palm Springs, CA (April 2007)
  49. M. Gurfinkel, J. Suehle, J.B. Bernstein, Yoram Shapira, A.J. Lelis, D. Habersat, N. Goldsman, “Ultra-fast Characterization of Transient Gate Oxide Trapping in SiC MOSFETs”, Proc. of the IEEE International Reliability Physics Symposium 2007.
  50. J. Qin, X. Li, J.B. Bernstein, “SRAM Stability Analysis Considering Gate Oxide SBD, NBTI and HCI,” 2007 International Integrated Reliability Workshop (IIRW) Final Report, 2.2, (October 2007).
  51. M. Gurfinkel, et. al., “Characterization of Interface and Bulk Oxide Traps in SiC MOSFETs with Epitaxialy grown and implanted channels,” 2007 International Integrated Reliability Workshop (IIRW) Final Report, 8.3 (October 2007).
  52. L. Yang, J.B. Bernstein, D. Gajewski and J. Walls, “Predictive Reliability Assessment and Failure Rate Modeling for Electronic Packages,” IMAPS 40th International Symposium on Microelectronics, Final Report, WA5 (November 2007).
  53. M. Gurfinkel, P. Livshits, A. Rozen, Y. Fefer, J.B. Bernstein, Y. Shapira, “Supply signal fluctuations due to chip power grid resonance — a new reliability concern”, Proc. of the IEEE International Reliability Physics Symposium, (April-May 2008)
  54. J. Qin, B. Yan, Y. Shoshany, R. Druker, H. Rahamim, H. Marom, J.B. Bernstein, “Study of Transistor and Product NBTI Lifetime Distributions (A),” International Integrated Reliability Workshop (IIRW) Final Report, pp. 1-16 (October 2008)
  55. J. Qin, B. Yan, Y. Shoshany, R. Druker, H. Rahamim, H. Marom, J.B. Bernstein, “Study of Transistor and Product NBTI Lifetime Distributions (B),” International Integrated Reliability Workshop (IIRW) Final Report, pp. 64-67 (October 2008)
  56. B. Yan, J. Qin, J. Dai, Q. Fan, J.B. Bernstein, “Reliability Simulation and Design Consideration of High Speed ADC Circuits.” International Integrated Reliability Workshop (IIRW) Final Report, pp. 125-128 (October 2008)
  57. J. Qin, M. White, J.B. Bernstein, “A Study of Scaling Effect on DRAM Reliability,” Annual Reliability and Maintainability Symposium (RAMS), Final Report, pp. 9C-4 (January 2011)
  58. J. Qin, A. Hava, J.B. Bernstein, “FaRBS: a New PoF Based VLSI Reliability Prediction Method,” Annual Reliability and Maintainability Symposium (RAMS), Final Report, pp. 9D-3 (January 2011)