{"id":26,"date":"2015-10-28T11:41:56","date_gmt":"2015-10-28T09:41:56","guid":{"rendered":"http:\/\/www.eng.biu.ac.il\/temanad\/?page_id=26"},"modified":"2020-06-09T06:38:09","modified_gmt":"2020-06-09T03:38:09","slug":"publications","status":"publish","type":"page","link":"https:\/\/www.eng.biu.ac.il\/temanad\/publications\/","title":{"rendered":"Publications"},"content":{"rendered":"<h4 style=\"text-align: justify\">Books and Book Chapters:<\/h4>\n<ol>\n<li>P. Meinerzhagen, A. Teman, R. Giterman, N. Edri, A. Burg and <strong>A. Fish<\/strong> - \u201cGain-Cell Embedded DRAMs for Low Power VLSI Systems-on-Chip\u201d,\u00a0 Springer International Publishing, 2018.<\/li>\n<\/ol>\n<h4>Journal Articles:<\/h4>\n<ol>\n<li>R. Giterman, A. Bonetti, E. V. Bravo, T. Noy, A. Teman and A. Burg, \"Current-Based Data-Retention-Time Characterization of Gain-Cell Embedded DRAMs Across the Design and Variations Space,\" in\u00a0<em>IEEE Transactions on Circuits and Systems I: Regular Papers<\/em>, vol. 67, no. 4, pp. 1207-1217, April 2020<\/li>\n<li>D. Vana, p.E. Gaillardon and <strong>A.Teman<\/strong>, \"<em><strong><a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8959396\">C2TIG: Dynamic C2MOS Design Based on Three-Independent-Gate Field-Effect Transistors<\/a><\/strong>\", IEEE Transactions on Nanotechnology, vol. 19, pp. 123-136, <\/em>Jan. 2020<\/li>\n<li>A. Bonetti, R. Golman, R. Giterman, <strong>A. Teman<\/strong> and A. Burg, \"<em><strong><a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8951129\">Gain-Cell Embedded DRAMs: Modeling and Design Space<\/a><\/strong>\", IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 28, no. 3, pp. 646-659, <\/em>March 2020<\/li>\n<li>O. Maltabashi, Y. Kra and <strong>A. Teman<\/strong>, \"<em><strong><a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8772144\">Physically-aware Affinity-driven Multiplier Implementation<\/a><\/strong>\", IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, pp. 1-1, <\/em>2019<\/li>\n<li>R. Giterman, A. Bonetti, A. Burg, <strong>A. Teman<\/strong>, <em>\"<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8630062\"><strong>GC-eDRAM with Body-Bias Compensated Readout and Error Detection in 28nm FD-SOI<\/strong><\/a>,\"<\/em> <em>IEEE Transactions on Circuits and Systems II: Express Briefs<\/em>, vol. 66, no. 12, pp. 2042-2046, Dec. 2019<\/li>\n<li>R. Giterman, R. Golman, and <strong>A. Teman<\/strong>, <em>\"<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8653811\"><strong>Improving energy-efficiency in dynamic memories through retention failure detection<\/strong>,<\/a>\"<\/em> \u00a0<em>IEEE Access<\/em>, vol. 7, pp. 27641-27649, 2019<\/li>\n<li>R. Giterman, Y. Weizman, and <strong>A. Teman<\/strong>, <em>\"<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8391755\"><strong>Gain-Cell Embedded DRAM Based Physical Unclonable Function<\/strong><\/a>,\" IEEE trans. Circuits Syst. I<\/em>, vol. 65, pp. 4208-4218, Dec 2018.<\/li>\n<li>R. Giterman, A. Fish, A. Burg, and <strong>A. Teman<\/strong>, <em>\"<\/em><strong><a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8036208\"><em>A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With over 1.6-ms Retention Time at 700 mV in\u00a0 28-nm FD-SOI<\/em><\/a>,<\/strong>\" <em>IEEE Trans. Circuits Syst. I<\/em>, vol. 65, pp. 1245-1256, April 2018.<\/li>\n<li>R. Giterman, A. Fish, N. Geuli, E. Mentovich, A. Burg, and <strong>A. Teman<\/strong>, <em>\"<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8356248\"><strong>An 800MHz Mixed-VT 4T IFGC Embedded DRAM in 28nm CMOS Bulk Process for Approximate Storage Applications<\/strong><\/a>\"<\/em>, <em>IEEE J. Solid Circuits<\/em>, vol. 53, pp. 2136-2148, July 2018.<\/li>\n<li>R. Ghanaatian, A. Balatsoukas-Stimming, C. Muller, M. Meidlinger, G. Matz, <strong>A. Teman<\/strong>, and A. Burg, <em>\"<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8113527\"><strong>A 588-Gb\/s LDPC Decoder Based on Finite-Alphabet Message Passing<\/strong><\/a>,\"<\/em> <em>IEEE Trans<\/em>. <em>VLSI Syst<\/em>., vol. 26, pp. 329-340, Feb 2018.<\/li>\n<li>R. Giterman, <strong>A. Teman<\/strong> and P. Meinerzhagen, \"<em><strong><a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8089774\">Hybrid GC-eDRAM\/SRAM Bitcell for Robust Low-Power Operation<\/a><\/strong><\/em>\", <em>IEEE trans. Circuits Syst. II, vol. 64, pp. 1362-1366, Dec 2017.<\/em><\/li>\n<li>A. Kazimirsky, <strong>A. Teman<\/strong>, N. Edri, A. Fish <em><strong>\"<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7956276\">An 0.65V 500MHz Integrated Dynamic and Static RAM (iD-SRAM) for Error Tolerant Applications<\/a>\"<\/strong> IEEE trans. Circuits Syst. , vol. 25, no. 9, pp. 2411-2418, Sep. 2017.<\/em><\/li>\n<li>A. Bonetti, <strong>A. Teman<\/strong>, P. Flatresse, A. Burg, <strong><em>\"<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7927747\">Multipliers-Driven Perturbation of Coefficients for Low-Power Operation in Reconfigurable FIR Filters<\/a>\"<\/em><\/strong> Accepted to IEEE TCAS-I, 2017.<\/li>\n<li>A. Bonetti, N. Preyss, <strong>A. Teman<\/strong>, A. Burg, <em><strong>\u201c<a href=\"http:\/\/delivery.acm.org\/10.1145\/3060000\/3054744\/a62-bonetti.pdf?ip=132.70.227.129&amp;id=3054744&amp;acc=ACTIVE%20SERVICE&amp;key=0D17F1A88EABC760%2EE8BDD9D808F7A2BA%2E4D4702B0C3E38B35%2E4D4702B0C3E38B35&amp;__acm__=1566284369_2c1c8ebe28934aef909d4a652980c3d1\">Automated Integration of Dual-Edge Clocking for Low-Power\u00a0Operation in Nanometer Nodes<\/a>,\u201d <\/strong><\/em>Accepted to ACM TODAES, 2017.<\/li>\n<li>D. Rossi, A. Pullini, I. Loi, M. Gautschi, F. Gurkaynak, <strong>A. Teman<\/strong>, et al.,\u00a0<strong><em>\u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8065010\">Energy Efficient Near-Threshold Parallel Computing: The PULPv2 Cluster<\/a>,\u201d<\/em><\/strong> Accepted to IEEE Micro, 2017.<\/li>\n<li>R. Giterman, L. Atias, and <strong>A. Teman<\/strong>, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7563385\"><strong><em>Area and energy-e\ufb03cient complementary dual-modular redundancy dynamic memory for space applications<\/em><\/strong><\/a>,\u201d IEEE TVLSI, vol. PP, no. 99, pp. 1\u20138, 2016<\/li>\n<li>L. Moyal, I. Levi, <strong>A. Teman<\/strong>, and A. Fish, \u201c<a href=\"https:\/\/pdf.sciencedirectassets.com\/271564\/1-s2.0-S0167926016X0003X\/1-s2.0-S0167926016300360\/main.pdf?X-Amz-Date=20191017T092135Z&amp;X-Amz-Algorithm=AWS4-HMAC-SHA256&amp;X-Amz-Signature=ca8946b87a552dd60d0cbceb41e031d9bdfdf0164df1821bfae12020676172e4&amp;X-Amz-Credential=ASIAQ3PHCVTY4VIBNB6C%2F20191017%2Fus-east-1%2Fs3%2Faws4_request&amp;type=client&amp;tid=prr-ab4caea8-20a0-4cd4-8508-460e1eeb77e2&amp;sid=dc4dfa136ad7584052686502374e89624262gxrqb&amp;pii=S0167926016300360&amp;X-Amz-SignedHeaders=host&amp;X-Amz-Security-Token=AgoJb3JpZ2luX2VjEHgaCXVzLWVhc3QtMSJGMEQCICuAejkxn8G7bZyQusS8xs%2Bv6%2F%2BRzbhSZYRwj9zLugsyAiAKRBOVnCynEihuuGHUmensBXUcMeef40HuAEOSimF5JyraAwhxEAIaDDA1OTAwMzU0Njg2NSIM5WZiQYUqHmaj9to0KrcDBqtWGpdVSY5%2FD0rHfUVxH5A%2FGJ9WIN3m2zFCewVPHIt5JSt0A4q0wBJ7LIUyiTN8KjYXC1CRYlSGFeF1PQFRIOh%2FQA1ZjsqHvmEkmezmmZjamdKt7bg5gmCLB%2FaQIaedao%2BKS8auCNvOol3eUOOzKzJF0ivQ9H3ZxJccouQMfLEDvUphO2pPbAJ%2FAWzool%2BSJ4wlSeUDCYKFgwdoSF2K9jbkO%2BNdkkpJIwffMnVaDF74kH49S6Bsv79uRIx4mbPbPw70gStncghETaVbCL5pGRFsmu%2FYpaCx9lEMpipC16SDDzkqcrVQqBX8tOx3gl3Pwi%2Bzo6viWOWEThg%2BLCUhd1QB66BcecWJo7Ad86%2BoRUTFSZlOzzUK%2F%2FstFRa1amxURPiH6pLysesiamjggUy2Z7RGNzjmBzzQkanhKAsdWFp5UQiviDRE3GqKr1w6nQSsBQdti0ZGOIJeW9N84Z7YxSuqqS076mVKqrWg8jfE9v0ROW1ljnbGM%2FOAKwNtAKydjdulZE1nglIkYR6KXV4trI4uTB0tIPLLjXoXZKq8BUEvygCU4s2sbGVf852taQURJyl8t7XNYTC5s6DtBTq1AUtGfQtC6oBXwVxUZoon28sz%2BTgh32HnCjFJrqsyIFgjAMppR%2FAxuOESwmAspJXXK4igqaJwLnIdaAyEGQmukZWrPUuncwJGQcuUOvy0wGhJb%2BOAckWXysPJekrXrk%2F4xWtV5awK6JpfwaZ0ap7wwbm7yVKXO9LXwX71%2ByfyJK1z3DW%2BpQWoHpZxiFoGxYLUwMWOHBgdATeNGTEZ0wzq5%2FiFXogGUKYZDQqAGoICd0H%2Bi87OSKA%3D&amp;host=68042c943591013ac2b2430a89b270f6af2c76d8dfd086a07176afe7c76c2c61&amp;X-Amz-Expires=300&amp;hash=1634453da0ce1ff932c18b871316afa384dd4aa21e0f6c1f0a8ac56494cffa91\"><strong><em>Synthesis of dual mode logic<\/em><\/strong><\/a>,\u201d Integration the VLSI Journal (VLSI-D),\u00a0vol. 55, pp. 246\u2013253, 2016<\/li>\n<li><strong>A. Teman<\/strong>, D. Rossi, P. Meinerzhagen, L. Benini, and A. Burg, \u201c<a href=\"http:\/\/delivery.acm.org\/10.1145\/2900000\/2890498\/a59-teman.pdf?ip=132.70.227.129&amp;id=2890498&amp;acc=ACTIVE%20SERVICE&amp;key=0D17F1A88EABC760%2EE8BDD9D808F7A2BA%2E4D4702B0C3E38B35%2E4D4702B0C3E38B35&amp;__acm__=1566285319_6cc020007d9b28ac096644451cb8dd54\"><strong><em>Power, area, and performance optimization of standard cell memory arrays through controlled placement<\/em><\/strong><\/a>,\u201d ACM TODAES, vol. 21, pp. 59:1\u201359:25, May 2016<\/li>\n<li>L. Atias, <strong>A. Teman<\/strong>, R. Giterman, P. Meinerzhagen, and A. Fish, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=6716579\"><strong><em>A low-voltage 13T radiation hardened\u00a0SRAM bitcell for low-voltage operation<\/em><\/strong>,<\/a>\u201d IEEETVLSI, vol. 24, no. 8, pp. 2622\u20132633, 2016<\/li>\n<li>N. Edri, P. Meinerzhagen, <strong>A. Teman<\/strong>, A. Burg, and A. Fish, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7430275\"><strong><em>Silicon-proven per-cell retention time\u00a0distribution model of gain-cell based eDRAM<\/em><\/strong><\/a>,\u201d IEEE TCAS-I, vol. 63, pp. 222\u2013232, Feb\u00a02016<\/li>\n<li>R. Giterman, <strong>A. Teman<\/strong>, P. Meinerzhagen, L. Atias, A. Burg, and A. Fish, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7031447\"><strong><em>Single-supply 3T gain-cell\u00a0for low-voltage low-power applications<\/em><\/strong><\/a>,\u201d <em>IEEE TVLSI<\/em>, vol. 24, no. 1, pp. 358\u2013362, 2016<\/li>\n<li><strong>A. Teman<\/strong> and R. Visotsky, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=6923443\"><strong><em>A fast modular method for true variation-aware separatrix tracing in\u00a0nanoscaled SRAMs<\/em><\/strong><\/a>,\u201d <em>IEEE TVLSI<\/em>, vol. 23, no. 10, pp. 2034\u20132042, 2015<\/li>\n<li>H. Dagan, A. Shapira, <strong>A. Teman<\/strong>, A. Mordakhay, S. Jameson, E. Pikhay, V. Dayan, Y. Roizin, E. Socher,\u00a0and A. Fish, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=6832604\"><strong><em>A low-power low-cost 24 GHz RFID tag with a C-Flash based embedded memory<\/em><\/strong>,<\/a>\u201d <em>IEEE\u00a0JSSC<\/em>, vol. 49, no. 9, pp. 1942\u20131957, 2014<\/li>\n<li><strong>A. Teman<\/strong>, P. Meinerzhagen, R. Giterman, A. Fish, and A. Burg, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=6754136\"><strong><em>Replica technique for adaptive refresh timing of gain-cell-embedded DRAM<\/em><\/strong>,<\/a>\u201d <em>IEEE TCAS-II<\/em>, vol. 61, no. 4, pp. 259\u2013263, 2014<\/li>\n<li>P. Meinerzhagen, <strong>A. Teman<\/strong>, A. Fish and A. Burg, <em>\"<strong><a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8410960\">Impact of body biasing on the retention time of gain-cell memories<\/a>,<\/strong>\"<\/em> <em>The Journal Of Engineering<\/em>, vol. 1, no. 1, 2013<\/li>\n<li>P. Meinerzhagen, <strong>A. Teman<\/strong>, R. Giterman, A. Burg, and A. Fish, \u201c<a href=\"\/\/madrid.eng.biu.ac.il\/engguest\/korncla\/Downloads\/jlpea-03-00054.pdf\"><strong><em>Exploration of sub-VT and near-VT\u00a02T gain-cell memories for ultra-low power applications under technology scaling<\/em><\/strong><\/a>,\u201d MDPI JLPEA, vol. 3, no. 2, pp. 54\u201372, 2013<\/li>\n<li>H. Dagan, <strong>A. Teman<\/strong>, E. Pikhay, V. Dayan, A. Mordakhay, Y. Roizin, and A. Fish, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=6492123\"><strong><em>A low-power\u00a0DCVSL-like GIDL-free voltage driver for low-cost RFID nonvolatile memory<\/em><\/strong><\/a>,\u201d <em>IEEE JSSC<\/em>, vol. 4, no. 6, pp. 1497\u20131510, 2013<\/li>\n<li><strong>A. Teman<\/strong>, A. Mordakhay, and A. Fish, \u201c<a href=\"https:\/\/reader.elsevier.com\/reader\/sd\/pii\/S002626921200256X?token=78B04F6E6A3733C3766D8DAC5EE29AAA84D8E9816B9DD1ECFD407B215381A728BB7C24D53BC3C58507CC2095541219F7\"><strong><em>Functionality and stability analysis of a 400 mV quasi-static RAM (QSRAM) bitcell<\/em><\/strong>,<\/a>\u201d Microelectronics Journal, vol. 44, no. 3, pp. 236\u2013247, 2013<\/li>\n<li><strong>A. Teman<\/strong>, H. Dagan, V. dayan, E. Pikhay, Y. Roizin, and A. Fish, <em>\"<strong>Zero-cost ultra-low power non-volatile memory module for RFID applications<\/strong>,\"<\/em> <em>TowerJazz Technical Journal<\/em>, vol. 4, pp. 46-49, July 2013<\/li>\n<li>A. Spivak, <strong>A. Teman<\/strong>, A. Belenky, O. Yadid-Pecht, and A. Fish, \u201c<a href=\"\/\/madrid.eng.biu.ac.il\/engguest\/korncla\/Downloads\/sensors-12-10067.pdf\"><strong><em>Low-voltage 96 dB snapshot CMOS\u00a0image sensor with 4.5 nW power dissipation per pixel<\/em><\/strong>,<\/a>\u201d MDPI Sensors, vol. 12, no. 8, pp. 10067\u201310085,\u00a02012<\/li>\n<li><strong>A. Teman<\/strong>, O. Yadid-Pecht, and A. Fish, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=5771526\"><strong><em>Leakage reduction in advanced image sensors using an\u00a0improved AB2C scheme<\/em><\/strong><\/a>,\u201d IEEE Sensors Journal, vol. 12, no. 4, pp. 773\u2013784, 2012<\/li>\n<li><strong>A. Teman<\/strong>, A. Mordakhay, J. Mezhibovsky, and A. Fish, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=6407964\"><strong><em>A 40-nm sub-threshold 5T SRAM bit cell\u00a0with improved read and write stability<\/em><\/strong>,<\/a>\u201d IEEE TCAS-II, vol. 59, no. 12, pp. 873\u2013877, 2012<\/li>\n<li>A. Spivak, <strong>A. Teman<\/strong>, A. Belenky, O. Yadid-Pecht, and A. Fish, <em>\"<strong><a href=\"\/\/madrid.eng.biu.ac.il\/engguest\/korncla\/Downloads\/jlpea-01-00059-v2.pdf\">Power-performance tradeoffs in wide dynamic range image sensors with multiple reset approach<\/a>,<\/strong>\"<\/em> <em>MDPI J. Low Power Elec. and App<\/em>., vol. 1, no. 1, pp. 59-76, 2011<\/li>\n<li><strong>A. Teman<\/strong>, L. Pergament, O. Cohen, and A. Fish, \"<strong><em><a href=\"\/\/madrid.eng.biu.ac.il\/engguest\/korncla\/Downloads\/jlpea-01-00204-v2.pdf\">A minimum leakage quasi-static RAM bitcell<\/a><\/em>,<\/strong>\" <em>MDPI J. Low Power Elec. and App<\/em>., vol.1, no. 1, pp. 204-218, 2011<\/li>\n<li><strong>A. Teman<\/strong>, L. Pergament, O. Cohen, and A. Fish, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=6008514\"><strong><em>A 250 mV 8 kb 40 nm ultra-low power 9T supply\u00a0feedback SRAM (SF-SRAM)<\/em><\/strong>,<\/a>\u201d IEEE JSSC, vol. 46, no. 11, pp. 2713\u20132726, 2011<\/li>\n<li><strong>A. Teman<\/strong>, O. Yadid-Pecht, and A. Fish, \"<em><strong><a href=\"http:\/\/citeseerx.ist.psu.edu\/viewdoc\/download?doi=10.1.1.386.8830&amp;rep=rep1&amp;type=pdf#page=102\">Large VLSI arrays - power and architectural perspectives<\/a><\/strong>\" International Journal of Information Technologies and Knowledge (IJ ITK), vol. 4, no. 1, pp. 76-90, 2010<\/em><\/li>\n<\/ol>\n<h4>Peer-reviewed Conference Proceedings:<\/h4>\n<ol>\n<li>Y. Kra, T. Noy and <strong>A. Teman<\/strong>, \"Wavepro: Clock-less wave-propagated pipeline compiler for low-power and high-throughput computation\" in <em>Proc. of the Design, Automation and Test in Europe Conference and Exhibition (DATE)<\/em>, DATE 2020<\/li>\n<li>A. Shalom, A. Fish and <strong>A. Teman<\/strong>, \"A 9pW\/bit 440mV 3T Gain-Cell eDRAM for ULP Applications in 28nm FD-SOI\" in <em>Proc. of IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)<\/em>, October 2019<\/li>\n<li>T. Munk, H. Kugler, O. Maori and <strong>A. Teman<\/strong>, \"TEMPO: Thermal-Efficient Management of Power in High-Throughput Network Switches,\"\u00a0<em>2019 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)<\/em>,pp. 1-4, Hsinchu, Taiwan, 2019<\/li>\n<li>O. Maltabashi, H. Marinberg, R. Giterman and <strong>A. Teman<\/strong>, \"A 5-Transistor Ternary Gain-Cell eDRAM with Parallel Sensing,\"\u00a0<em>2018 IEEE International Symposium on Circuits and Systems (ISCAS)<\/em>, pp. 1-5, Florence, 2018<\/li>\n<li>A. Bonetti, J. Constantin, <strong>A. Teman<\/strong> and A. Burg, \"A Timing-Monitoring Sequential for Forward and Backward Error-Detection in 28 nm FD-SOI,\"\u00a0<em>2018 IEEE International Symposium on Circuits and Systems (ISCAS)<\/em>, pp. 1-4, Florence, 2018<\/li>\n<li>R. Giterman, A. Fish, A. Burg and <strong>A. Teman<\/strong>, \"A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI,\" in <i>Proc. of IEEE Int. Symp. on Circuits and Systems (ISCAS), 2018.<\/i><\/li>\n<li>A. Bonetti, <strong>A. Teman<\/strong>, P. Flatresse and A. Burg, \"Multipliers-Driven Perturbation of Coefficients for Low-Power Operation in Reconfigurable FIR Filters,\" in <i>Proc. of IEEE Int. Symp. on Circuits and Systems (ISCAS), 2018<\/i><\/li>\n<li>R. Golman, R. Giterman and <strong>A. Teman<\/strong>, \"A Dual-Negative Word-Line Technique for Improving Read Access in GC-eDRAM Arrays<strong>,<\/strong>\" in <em>Proc. of the IEEE Int. Conf. on the Science of Electrical Engineering (ICSEE)<\/em>, December 2018<\/li>\n<li>A. Shalom, R. Giterman and <strong>A. Teman<\/strong>, \"High Density GC-eDRAM Design in 16nm FinFET,\"\u00a0<em>2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS)<\/em>, pp. 585-588, Bordeaux, December 2018<\/li>\n<li>R. Golman, R. Giterman and <strong>A. Teman<\/strong>, \"Configurable Multi-Port Dynamic Bitcell with Internal Refresh Mechanism,\"\u00a0<em>2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS)<\/em>, pp. 589-592, Bordeaux, December 2018<\/li>\n<li>R. Giterman, <strong>A. Teman<\/strong> and A. Fish, \"A 14.3pW Sub-Threshold 2T Gain-Cell eDRAM for Ultra-Low Power IoT Applications in 28nm FD-SOI,\"\u00a0<em>2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)<\/em>, pp. 1-2 Burlingame, CA, USA, Oct. 2018<\/li>\n<li>R. Giterman, R. Golman, A. Shalom, O. Maltabashi, A. Fish and <strong>A. Teman<\/strong>, \"Live Demonstration: An 800 Mhz Gain-Cell Embedded DRAM in 28 nm CMOS Bulk Process for Approximate Computing Applications,\"\u00a0<em>2018 IEEE International Symposium on Circuits and Systems (ISCAS)<\/em>, pp. 1-1, Florence, May 2018<\/li>\n<li>R. Giterman, A. Fish, N. Geuli, E. Mentovich, A. Burg and <strong>A. Teman<\/strong>, \"An 800 Mhz mixed-VT 4T gain-cell embedded DRAM in 28 nm CMOS bulk process for approximate computing applications,\" <em>ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference<\/em>, pp. 308-311,\u00a0 Leuven, Sept. 2017<\/li>\n<li>R. Giterman, A. Teman and A. Fish, \"A 11.5pW\/bit 400mV 5T gain-cell eDRAM for ULP applications in 28nm FD-SOI,\"\u00a0<em>2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)<\/em>, pp. 1-3, San Francisco, CA, 2017<\/li>\n<li>R. Giterman, <strong>A. Teman<\/strong>, P. Meinerzhagen, <strong><em>\u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8089774\">Highly Configurable Hybrid GC-eDRAM\/SRAM Bitcell for Robust Low-Power Operation,<\/a>\u201d<\/em><\/strong> in <em>Proc. of IEEE Int. Symp. on Circuits and Systems (ISCAS)<\/em>, 2017<\/li>\n<li>J. Constantin, A. Bonetti, <strong>A. Teman<\/strong>, C. Mueller, L. Schmid, and A. Burg, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7598292\"><strong><em>DynOR: A 32-bit Microprocessor in 28 nm FD-SOI with Cycle-By-Cycle Dynamic Clock Adjustment<\/em><\/strong>,<\/a>\u201din \u00a0<em>ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference<\/em>, pp. 261-264, Lausanne, September 2016<\/li>\n<li>D. Rossi, A. Pullini, I. Loi, M. Gautschi, F. Gurkaynak, <strong>A. Teman<\/strong>, et al.,\u00a0\u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7503670\"><strong><em>193 MOPS\/mW @ 162\u00a0MOPS, 0.32V to 1.15V Voltage Range Multi-Core Accelerator for Energy-E\ufb03cient Parallel and Sequen<\/em><\/strong><strong><em>tial Digital Processing<\/em><\/strong>,<\/a>\u201d in\u00a0 <em>2016 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS XIX)<\/em>, pp. 1-3, Yokohama, April 2016<\/li>\n<li>R. Giterman, <strong>A. Teman<\/strong>, P. Meinerzhagen, A. Burg, and A. Fish, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7527413\"><strong><em>A process compensated gain cell\u00a0embedded DRAM for ultra low power variation aware design<\/em><\/strong><\/a>,\u201d in\u00a0 <em>2016 IEEE International Symposium on Circuits and Systems (ISCAS)<\/em>, pp. 1006-1009, Montreal, QC, 2016<\/li>\n<li>R. Ghanaatian, P. Whatmough, J. Constantin, <strong>A. Teman<\/strong>, and A. Burg, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7539142\"><strong><em>A low-power correlator for wake-up receivers with algorithm pruning through early termination<\/em><\/strong><\/a>,\u201d in <em>2016 IEEE International Symposium on Circuits and Systems (ISCAS)<\/em>, pp. 2667-2670,\u00a0 Montreal, QC, May 2016<\/li>\n<li>R. Giterman, <strong>A. Teman<\/strong>, L. Atias, and A. Fish, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7333525\"><strong><em>A soft error tolerant 4T gain-cell featuring a parity column for ultra-low power applications<\/em><\/strong><\/a>,\u201d in <em>Proc. of IEEE S3S<\/em> , pp. 1-2, October 2015<\/li>\n<li>S. Ganapathy, G. Karakonstantis, <strong>A. Teman<\/strong>, and A. Burg, \u201c<a href=\"http:\/\/delivery.acm.org\/10.1145\/2750000\/2744871\/a102-ganapathy.pdf?ip=132.70.227.129&amp;id=2744871&amp;acc=ACTIVE%20SERVICE&amp;key=0D17F1A88EABC760%2EE8BDD9D808F7A2BA%2E4D4702B0C3E38B35%2E4D4702B0C3E38B35&amp;__acm__=1566286123_33e59f09309b081b2e57442b30171630\"><strong><em><strong style=\"font-style: normal\"><em>Mitigating the impact of faults in unreliable\u00a0memories for error-resilient application<\/em><\/strong>s<\/em><\/strong><\/a>,\u201d in <em>Proc. of the Design Automation Conference (DAC) DAC<\/em>, pp. 102:1-106:6, ACM, NY., USA,\u00a0 2015<\/li>\n<li>S. Ganapathy, <strong>A. Teman<\/strong>, R. Giterman, A. P. Burg, and G. Karakonstantis, \u201c<strong><em><a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7182027\">Approximate computing with unreliable dynamic memories<\/a>,<\/em><\/strong>\u201d in <em>Proc. of Int. New Circuits And Systems Conference (NEWCAS)<\/em>, pp. 1-4, June 2015 Special session on Approximate Computing.<\/li>\n<li>A. Bonetti, <strong>A. Teman<\/strong>, and A. P. Burg, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7169017\"><strong><em>An overlap-contention free true-single-phase clock dual-edge-triggered \ufb02ip-\ufb02op<\/em><\/strong>,<\/a>\u201d in Proc. of IEEE Int. Symp. on Circuits and Systems (ISCAS), 2015<\/li>\n<li><strong>A. Teman<\/strong>, G. Karakonstantis, R. Giterman, P. Meinerzhagen, and A. Burg, \u201c<a href=\"http:\/\/delivery.acm.org\/10.1145\/2760000\/2755864\/p489-teman.pdf?ip=132.70.227.129&amp;id=2755864&amp;acc=ACTIVE%20SERVICE&amp;key=0D17F1A88EABC760%2EE8BDD9D808F7A2BA%2E4D4702B0C3E38B35%2E4D4702B0C3E38B35&amp;__acm__=1566287193_31c3e6f54684fa61efb92c3e6f65feff\"><strong><em>Energy versus data\u00a0integrity trade-o\ufb00s in embedded high-density logic compatible dynamic memories<\/em><\/strong><\/a>,\u201d in Proc. of the Design Automation and Test in Europe Conference Exhibition (DATE), DATE 2015, pp. 489\u2013494, San Jose, CA, USA, 2015<\/li>\n<li><strong>A. Teman<\/strong>, D. Rossi, P. Meinerzhagen, L. Benini, and A. Burg, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=7058985\"><strong><em>Controlled placement of standard cell\u00a0memory arrays for high density and low power in 28nm FD-SOI<\/em><\/strong>,<\/a>\u201d in Proc. of the Asia and South Pacific Design Automation Conference (ASP-DAC) , pp. 81\u201386, 2015<\/li>\n<li>L. Atias, <strong>A. Teman<\/strong> and A. Fish, \"Single event upset mitigation in low power SRAM design,\"\u00a0<em>2014 IEEE 28th Convention of Electrical &amp; Electronics Engineers in Israel (IEEEI)<\/em>, pp. 1-5, Eilat, 2014<\/li>\n<li>R. Giterman, <strong>A. Teman<\/strong>, P. Meinerzhagen, A. Burg and A. Fish, \u201c<strong><em><a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=6865600\">4T gain-cell with internal-feedback\u00a0for ultra-low retention power at scaled CMOS nodes<\/a>,<\/em><\/strong>\u201din <em>2014 IEEE International Symposium on Circuits and Systems (ISCAS)<\/em>, pp. 2177-2180, Melbourne VIC, 2014<\/li>\n<li><strong>A. Teman<\/strong>, \u201c<a href=\"https:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=6828617\"><strong><em>Dynamic Stability and Noise Margins of SRAM Arrays in Nanoscaled Technologies<\/em><\/strong><\/a>,\u201d in<em> IEEE FTFC 2014<\/em>, pp. 1-5, Monte Carlo, Monaco<\/li>\n<li>A. Vaknin, O. Yona and <strong>A. Teman<\/strong>, \"A Double-Feedback 8T SRAM bitcell for low-voltage low-leakage operation,\"\u00a0<em>2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)<\/em>, pp. 1-2, Monterey, CA, 2013<\/li>\n<li>L. Atias, <strong>A. Teman<\/strong> and A. Fish, \"A 13T radiation hardened SRAM bitcell for low-voltage operation,\"\u00a0<em>2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)<\/em>, pp. 1-2, Monterey, CA, 2013<\/li>\n<li>N. Edri, S. Fraiman, <strong>A. Teman<\/strong> and A. Fish, \"Data retention voltage detection for minimizing the standby power of SRAM arrays,\"\u00a0<em>2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel<\/em>, pp. 1-5, Eilat, 2012<\/li>\n<li><strong>A. Teman<\/strong>, P. Meinerzhagen, A. Burg and A. Fish, \"Review and classification of gain cell eDRAM implementations,\"\u00a0<em>2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel<\/em>, pp. 1-5, Eilat, 2012<\/li>\n<li>P. Meinerzhagen, <strong>A. Teman<\/strong>, A. Mordakhay, A. Burg and A. Fish, \"A sub-VT 2T gain-cell memory for biomedical applications,\"\u00a0<em>2012 IEEE Subthreshold Microelectronics Conference (SubVT)<\/em>, pp. 1-3, Waltham, MA, 2012<\/li>\n<li>H. Dagan, <strong>A. Teman<\/strong>, A. Fish, E. Pikhay, V. Dayan and Y. Roizin, \"A low-cost low-power non-volatile memory for RFID applications,\"\u00a0<em>2012 IEEE International Symposium on Circuits and Systems (ISCAS)<\/em>, pp. 1827-1830, Seoul, 2012<\/li>\n<li>H. Dagan, <strong>A. Teman<\/strong>, A. Fish, E. Pikhay, V. Dayan and Y. Roizin, \"A GIDL free tunneling gate driver for a low power non-volatile memory array,\"\u00a0<em>2012 IEEE International Symposium on Circuits and Systems (ISCAS)<\/em>, pp. 452-455, Seoul, 2012<\/li>\n<li>J. Mezhibovsky,<strong> A. Teman<\/strong> and A. Fish, \"State space modeling for sub-threshold SRAM stability analysis,\"\u00a0<em>2012 IEEE International Symposium on Circuits and Systems (ISCAS)<\/em>, pp. 1823-1826, Seoul, 2012<\/li>\n<li>I. Schwartz, <strong>A. Teman<\/strong>, R. Dobkin and A. Fish, \"Near-threshold 40nm Supply Feedback C-element,\"\u00a0<em>2011 3rd Asia Symposium on Quality Electronic Design (ASQED)<\/em>, pp. 74-78, Kuala Lumpur, 2011<\/li>\n<li>J. Mezhibovsky, <strong>A. Teman<\/strong> and A. Fish, \"Low voltage SRAMs and the scalability of the 9T Supply Feedback SRAM,\"\u00a0<em>2011 IEEE International SOC Conference<\/em>, pp. 136-141, Taipei, 2011<\/li>\n<li><strong>A. Teman<\/strong> and A. Fish, \"Sub-threshold and near-threshold SRAM design,\"\u00a0<em>2010 IEEE 26-th Convention of Electrical and Electronics Engineers in Israel<\/em>, pp. 000608-000612, Eilat, 2010<\/li>\n<li><strong>A. Teman<\/strong>, O. Yadid-Pecht and A. Fish, \"An Improved AB2C scheme for leakage power reduction in image sensors with on-chip memory,\"\u00a0<em>SENSORS, 2009 IEEE<\/em>, pp. 193-196, Christchurch, 2009<\/li>\n<li>S. Fisher, A. Teman, D. Vaysman, A. Gertsman, O. Yadid-Pecht and A. Fish, \"Ultra-low power subthreshold flip-flop design,\"\u00a0<em>2009 IEEE International Symposium on Circuits and Systems<\/em>, pp. 1573-1576, Taipei, 2009<\/li>\n<li>S. Fisher, A. Teman, D. Vaysman, A. Gertsman, O. Yadid-Pecht and A. Fish, \"Digital subthreshold logic design - motivation and challenges,\"\u00a0<em>2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel<\/em>, pp. 702-706 , Eilat, 2008<\/li>\n<li>A. Teman, S. Fisher, L. Sudakov, A. Fish and O. Yadid-Pecht, \"Autonomous CMOS image sensor for real time target detection and tracking,\"\u00a0<em>2008 IEEE International Symposium on Circuits and Systems<\/em>, pp. 2138-2141, Seattle, WA, 2008<\/li>\n<\/ol>\n<h4 style=\"text-align: justify\"><strong>Select Talks<\/strong><\/h4>\n<ol>\n<li style=\"text-align: justify\">O.\u00a0Maltabashi and <strong>A. Teman<\/strong>,\u00a0\"<a href=\"https:\/\/www.cadence.com\/content\/cadence-www\/global\/en_US\/home\/cdnlive\/israel-2017\/proceedings.html\"><em><strong>Controlled Placement of Standard Cell Memories with Innovus Implementation System<\/strong><\/em><\/a>\", in CDNLive Israel, October 2017<\/li>\n<li style=\"text-align: justify\"><strong>A. Teman<\/strong>,\u00a0\"<a href=\"https:\/\/www.cadence.com\/content\/cadence-www\/global\/en_US\/home\/cdnlive\/israel-2016\/proceedings.html\"><em><strong>FD-SOI Standard Cell Characterization with Cadence Liberate<\/strong><\/em><\/a>\", in CDNLive Israel, October 2016<\/li>\n<li style=\"text-align: justify\">A. Bonetti, N. Preyss, A. Burg, and <strong>A. Teman<\/strong>, \u201c<a href=\"https:\/\/www.cadence.com\/content\/cadence-www\/global\/en_US\/home\/cdnlive\/israel-2015\/proceedings.html\"><strong><em>Dual-edge triggered clocking - how we can use it and when<\/em><\/strong><\/a>,\u201d in CDNLive Israel, October 2015<\/li>\n<li style=\"text-align: justify\">A. Bonetti, N. Preyss, <strong>A. Teman<\/strong> and A. Burg, \u201c<strong><a href=\"https:\/\/www.cadence.com\/content\/cadence-www\/global\/en_US\/home\/cdnlive\/emea-2015\/proceedings.html\">Automated Integration of Dual-Edge Triggered Clocking Into the Standard Design Flow<\/a><\/strong>\u00a0,\u201d in CDNLive EDMA, April 2015<\/li>\n<li style=\"text-align: justify\">A. Bonetti, J. Constantin, <strong>A. Teman<\/strong> and A. Burg, \u201c<strong><em>Circuits and techniques for dynamic timing monitoring in microprocessors<\/em><\/strong>,\u201d in Nanotera Annual Meeting 2015, May 2015<\/li>\n<li style=\"text-align: justify\"><strong>A. Teman<\/strong>, G. Karakonstatis, S. Ganapathy, and A. Burg, \u201c<strong><em>Exploiting application error resilience for energy savings in memories<\/em><\/strong>,\u201d in Workshop on Approximate Computing (WAPCO), January 2015<\/li>\n<li style=\"text-align: justify\"><strong>A. Teman<\/strong> and A. Fish, \u201c<strong><em>SRAM stability in the nanoscale era<\/em><\/strong>,\u201d in CDNLive Israel, September 2012<\/li>\n<li style=\"text-align: justify\"><strong>A. Teman<\/strong> and A. Fish, \u201c<a href=\"https:\/\/www.slideshare.net\/chiportal\/track-e-low-voltage-sram-adam-teman-bgu\"><strong><em>Low voltage logic and SRAM design<\/em><\/strong><\/a>,\u201d in ChipEx 2011, May 2011<\/li>\n<\/ol>\n","protected":false},"excerpt":{"rendered":"<p>Books and Book Chapters: P. Meinerzhagen, A. Teman, R. Giterman, N. Edri, A. Burg and A. Fish &#8211; \u201cGain-Cell Embedded DRAMs for Low Power VLSI Systems-on-Chip\u201d,\u00a0 Springer International Publishing, 2018. Journal Articles: R. Giterman, A. Bonetti, E. V. Bravo, T. Noy, A. Teman and A. Burg, &#8220;Current-Based Data-Retention-Time Characterization of Gain-Cell Embedded DRAMs Across the &hellip; <a href=\"https:\/\/www.eng.biu.ac.il\/temanad\/publications\/\" class=\"more-link\">Continue reading <span class=\"screen-reader-text\">Publications<\/span> <span class=\"meta-nav\">&rarr;<\/span><\/a><\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-26","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.eng.biu.ac.il\/temanad\/wp-json\/wp\/v2\/pages\/26"}],"collection":[{"href":"https:\/\/www.eng.biu.ac.il\/temanad\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.eng.biu.ac.il\/temanad\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.eng.biu.ac.il\/temanad\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.eng.biu.ac.il\/temanad\/wp-json\/wp\/v2\/comments?post=26"}],"version-history":[{"count":89,"href":"https:\/\/www.eng.biu.ac.il\/temanad\/wp-json\/wp\/v2\/pages\/26\/revisions"}],"predecessor-version":[{"id":453,"href":"https:\/\/www.eng.biu.ac.il\/temanad\/wp-json\/wp\/v2\/pages\/26\/revisions\/453"}],"wp:attachment":[{"href":"https:\/\/www.eng.biu.ac.il\/temanad\/wp-json\/wp\/v2\/media?parent=26"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}