{"id":37,"date":"2012-05-09T13:30:04","date_gmt":"2012-05-09T10:30:04","guid":{"rendered":"http:\/\/www.eng.biu.ac.il\/bernstj\/?page_id=37"},"modified":"2013-08-11T15:36:54","modified_gmt":"2013-08-11T12:36:54","slug":"conferences","status":"publish","type":"page","link":"https:\/\/www.eng.biu.ac.il\/bernstj\/conferences\/","title":{"rendered":"Conferences"},"content":{"rendered":"<p>Refereed Conference Proceedings (chronological order):<\/p>\n<ol>\n<li>Bernstein, J.B., Bahl, S., Schlecht, M.F., \u201cA Low Capacitance Power MOSFET With an Integral Gate Driver,\" Proceeding of the 18th Annual IEEE Power Electronics Specialists Conference, PESC vol. 87, pp. 704, 61-8 (Virginia 1987)<\/li>\n<li>Cooke, C.M., Wright, K.A., Takasu, N., Bernstein, J.B., Gollin, E., \u201cCalibration of Volume Charge Measurements By Use of Electron Beam Implantation,\" 1989 Annual Report. Conference on Electrical Insulation and Dielectric Phenomena, pp. 508, 435-41 (Virginia 1989)<\/li>\n<li>Bernstein, J.B., Cohen, S.S., Wyatt, P.W., \"Fatigue of aluminum films leading to melting by multiple laser pulses,\" Phase Formation and Modification by Beam-Solid Interactions Symposium,MRS pp. 589-93 (Boston 1991)<\/li>\n<li>Bernstein, J.B., Gleason, E.F., Wyatt, P.W., \"A thermally stable silicon rich amorphous silicon nitride alloy for electronic device applications,\" Amorphous Silicon Technology Symposium, MRS pp. 667-72 (California 1992)<\/li>\n<li>Bernstein, J.B., Gleason, E.F., Wyatt, P.W., \"High density metal cross-point laser linking,\" International Conference on Wafer Scale Integration Proceedings, pp. 176-81 (California 1992)<\/li>\n<li>Bernstein, J.B., Gleason, E.F., Wetsel, A.E., Liu, E.Z., Wyatt, P.W., \"Anomalous Behavior of Semi-insulating Silicon Rich Amorphous Silicon Nitride,\" Amorphous Insulating Thin Films Symposium, MRS pp. 113-18 (Massachusetts 1993)<\/li>\n<li>Bernstein, J.B., \"Dielectric fracture leading to metallic connections employing a lateral link structure,\" Thin Films: Stresses and Mechanical Properties V. Symposium, MRS pp. 833-7 (Massachusetts 1994)<\/li>\n<li>Bernstein, J.B., Ventura, T.M., Radomski, A.T., \"Laser induced microfracture leading to high density metal-to-metal connections,\" Proceedings of the SPIE, The International Society for Optical Engineering, pp. 165-76 (Texas 1994)<\/li>\n<li>Bernstein, J.B., \"Laser Formed Lateral Metallic Connections,\" Proceedings of the Second International Conference on Beam Processing of Advanced Materials, pp. 101-104 (Ohio 1995)<\/li>\n<li>Chen, Y., Suehle, J.S., Shen, C.C., Bernstein, J.B., Messick, C., \"A New Technique to Extract TDDB Acceleration Parameters from Fast Qbd Tests,\" Proceedings of International Integrated Reliability Workshop, pp. 67-69, (Nevada 1997)<\/li>\n<li>Chen, Y., Suehle, J.S., Shen, C.C., Bernstein, J.B., Messick, C., Chaparala, P., \"The correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides,\" 1998 IEEE International Reliability Physics Symposium Proceedings. 36thAnnual, pp. 87-91 (California 1998)<\/li>\n<li>Bernstein, J.B., Zhang, W., Nicholas, C.H., \"Laser formed connections for programmable wiring,\" Proceedings of the IEEE 1998 Custom Integrated Circuits Conference, pp. 608, 163-5 (California 1998)<\/li>\n<li>Bernstein, J.B., Zhang, W., Nicholas, C.H., \"Laser programmable metallic vias,\" Proceedings of the IEEE 1998 International Interconnect Technology Conference, pp. 304, 205-7 (New York 1998)<\/li>\n<li>Chen, Y, Suehle, J.S., Shen, C.C., Bernstein, J.B., Messick, C., Chaparala, P., \"The correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides,\" 1998 IEEE International Reliability Physics Symposium Proceedings.  36th Annual, pp. vii+421, 87-91 (Nevada 1998)<\/li>\n<li>Shen, C.C., Kefner, A.R., Jr., Berning, D.W., Bernstein, J.B., \"Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions,\" Conference Record of 1998 IEEE Industry Applications Conference, p. 3, vol. xxx+2410, 831-9, vol. 2 (New York 1999)<\/li>\n<li>Zhang, W., Bernstein, J.B., \"Electromigration simulation under DC\/AC stresses considering microstructure,\" Proceedings of the IEEE 1999 International Interconnect Technology Conference, pp. 295, 41-3 (California 1999)<\/li>\n<li>Suehle, J.S., Vogel, E., Wang, B., Bernstein, J.B., \"Temperature Dependence of Soft Breakdown and Wear-Out in Sub-3 nm SiO2 Films,\" International Reliability Physics Symposium - Conference Proceedings, pp. 33-9 (California 2000)<\/li>\n<li>E. M. Vogel, M. D. Edelstein, C. A. Richter, N. V. Nguyen, I. Levin, D. L. Kaiser, H. Wu, and J. Bernstein, \"Issues in High-? Gate Dielectrics for Future MOS Devices\", Proceedings of IEEE Microelectronics Reliability Qualification Workshop (California 2000)<\/li>\n<li>B. Wang, J. Suehle, E.M. Vogel, J.B. Bernstein, \"The Effect of Stress Interruption and pulsed bias stress on Ultra-Thin Gate Dielectric Reliability,\" Proceedings of Integrated Reliability Workshop (California 2000)<\/li>\n<li>J. Lee, G. Zhuo and J.B. Bernstein, \"Laser Programmable Multichip Module using Vertical Make-link,\" Proceedings of the IEEE Electronic Components and Technology Conference, pp 932-936 (Nevada 2000)<\/li>\n<li>Vogel, E., Suehle, J.S., Edelstein, M.D., Wang, B., Chen, Y., Bernstein, J.B., \"Degradation of Ultra-thin SiO2 Under Combined Substrate Hot Electron and Tunneling Stress,\" Semiconductor Interface Specialists Conference, (California 2000)<\/li>\n<li>J.S. Suehle, et.al \u2026 J.B. Bernstein, \"Challenges of high-k gate dielectrics for future MOS devices,\" 6th International Symposium on Plasma and Process Induced Damage, pp. 90-93 (California 2001)<\/li>\n<li>B. Wang, J.B. Bernstein, \"Latent Reliability Degradation of Ultra-Thin Oxides After Heavy Ion and Gamma Irradiation,\" Proceedings of Integrated Reliability Workshop (California 2001)<\/li>\n<li>Bernstein, J.B. and Lee, J, \"A Laser Formed MakeLink for Customization and Repair,\" Proceedings of IEEE International Symposium on Semiconductor Manufacturing, pp. 347-350 (California 2001)<\/li>\n<li>Z. Gao, J. Luo, Hu Huang, W. Zhang, J.B. Bernstein, \"Reliable laser programmable gate array technology,\"  Proceedings of International Symposium on Quality Electronic Design, pp. 252-256 (Califorinia 2002)<\/li>\n<li>Ji Luo, K. Chung, Hu Huang, J.B. Bernstein, \"Comparison of Silicon Carbide Schottky diodes,\" Proceedings of 2001 GaAs Reliability Workshop (Virginia 2001)<\/li>\n<li>Ji Luo, Kuan-Jung Chung, Hu Huang, J.B. Bernstein, \"Temperature Dependence of R(on,sp) in Silicon Carbide and GaAs Schottky diodes,\" Proceedings of IEEE International Reliability Physics Symposium, 40th annual (New Jersey 2002)<\/li>\n<li>Zhuo Gao, Ji Luo, Hu Huang, Wei Zhang, J.B. Bernstein, \"Reliable laser programmable gate array technology,\" Proceedings International Symposium on Quality Electronic Design, p. 252-6, Los Alamitos (California 2002)<\/li>\n<li>D. Heh, J.B. Bernstein, E.M. Vogel, \"Defect generation in ultra-thin oxide over large fluence ranges,\" Proceedings of Integrated Reliability Workshop, Lake Tahoe (Nevada 2002)<\/li>\n<li>X. Zhang, N. Goldsman, J.B. Bernstein, J.M. McGarrity, \u201cNumerical and Experimental Characterization of 4H-SiC Schottky Diodes,\u201d Proceedings of IEEE International Semiconductor Device Research Symposium, p. 120-1 (2003)<\/li>\n<li>M. White, M. Cooper, Y. Chen, J. Bernstein, \"Impact of Junction Temperature on Microelectronic Device Reliability and Considerations for Space Applications,\" Proceedings of Integrated Reliability Workshop, p. 133-6 (Nevada 2003)<\/li>\n<li>B. Zhu, J.B. Bernstein, J. Suehle, \"Negative bias temperature instability of deep sub-micron p-MOSFETs under pulsed bias stress,\" Proceedings of Integrated Reliability Workshop, pp. 125-9 (Nevada 2003) <\/li>\n<li>Y. Chen, D. Nguyen, S. Guertin, J.B. Bernstein, M. White, R. Menke, S. Kayali, \u201cA Reliability Evaluation Methodology for Memory Chips for Space Applications when Sample Size is Small,\u201d Proceedings of Integrated Reliability Workshop, Lake Tahoe (Nevada 2003)<\/li>\n<li>B. Zhu, J.S. Suehle, J.B. Bernstein, \u201cMechanism for reduced NBTI effect under pulsed bias stress conditions,\u201d Proceedings of Integrated Reliability Workshop, Phoenix (Arizona 2004)<\/li>\n<li>J.S. Suehle, B. Zhu, Y. Chen, J.B. Bernstein, \u201cAcceleration factors and mechanistic study of progressive breakdown in small area ultra-thin gate oxides,\u201d Proceedings of Integrated Reliability Workshop, Phoenix (Arizona 2004) <\/li>\n<li>Ji Luo; Bernstein, J.B.; Tuchman, J.A.; Hu Huang; \u201cA high performance radiation-hard field programmable analog array.\u201d Proceedings. 5th International Symposium on Quality Electronic Design. p. 522-7. (Los Alamitos, CA, 2004)<\/li>\n<li>Hu Huang, Joseph B. Bernstein, Martin Peckerar, Ji Luo; \u201cCombined Channel Segmentation and Buffer Insertion for Routability and Performance Improvement of Field Programmable Analog Arrays,\u201d Proceedings of the IEEE International Conference on Computer Design (October 2004)<\/li>\n<li>Xiaojun Li; Walter, J.D.; Bernstein, J.B.; \u201cSimulating and Improving Microelectronic Device Reliability by Scaling Voltage and Temperature,\u201d Quality of Electronic Design, 2005. ISQED 2005. Sixth International Symposium, pp.496  - 502 (March 2005)<\/li>\n<li>Xiaojun Li; Huang, B.; Qin, J.; Zhang, X.; Talmor, M.; Gur, Z.; Bernstein, J.B.; \u201cDeep Submicron CMOS Integrated Circuit Reliability Simulation with SPICE,\u201d Quality of Electronic Design, 2005. ISQED 2005. Sixth International Symposium on, pp. 382  - 389 (March 2005)<\/li>\n<li>Zhu, B.; Suehle, I.S.; Vogel, E.; Bernstein, J.B.; \u201cThe contribution of HFO2 bulk oxide traps to dynamic NBTI in pMOSFETs,\u201d IEEE International Reliability Physics Symposium 2005 Proceedings, pp. 533 \u2013 537 (April 2005)<\/li>\n<li>Kuan-Jung Chung; Bernstein, J.B.; Ji Luo; Tuchman, J.A.; Ma, Z.K.; \u201cExperimental Study for Low Resistance Interline Connections Using Pulsed Laser Techniques,\u201d Quantum Electronics and Laser Science 2005, Conference Volume 3, pp.1564 - 1566 (May 2005)<\/li>\n<li>Bing Huang; Xiaojun Li; Ming Li; Bernstein, J.; Smidts, \u201cStudy of the impact of hardware fault on software reliability,\u201d Proceedings. 16th IEEE International Symposium on Software Reliability Engineering. Chicago, IL, USA (Nov. 2005)<\/li>\n<li>M. Gurfinkel, J. Suehle, J.B. Bernstein, Y. Shapira, A.J. Lelis, D. Habersat, N. Goldsman, \"Ultra-Fast Measurement of Vth Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress\", 2006 International Integrated Reliability Workshop (IIRW) Final Report, pp. 49-53 (October 2006).<\/li>\n<li>M. White, C. Vu, C. Nguyen, R. Ruiz, Y. Chen, J.B. Bernstein, \u201cProduct Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOS,\u201d 2006 International Integrated Reliability Workshop (IIRW) Final Report, pp. 156-159 (October 2006).<\/li>\n<li>J. Qin, J.B. Bernstein, \u201cNon-Arrhenius Temperature Acceleration and Stress-Dependent Voltage Acceleration for Semiconductor Devices Involving Multiple Failure Mechanisms,\u201d  2006 International Integrated Reliability Workshop (IIRW) Final Report, pp. 93-97 (October 2006).<\/li>\n<li>Bernstein, J. B., \u201cReliability Qualification at the Maryland-Israel Center for Product Realization,\u201d Proceedings of 16th International Conference of the Israel Society for Quality, pp. 9.2.01 Tel Aviv (November 2006).<\/li>\n<li>M. Gurfinkel, J. Suehle, J.B. Bernstein, Y. Shapira, \"Enhanced Gate Induced Leakage Current in HfO2 MOSFETs due to Remote Interface Trap-Assisted Tunneling\", 2006 International Electron Devices Meeting (IEDM) technical digest, pp. 755-758, (Dec 2006).<\/li>\n<li>L. Condra, J. Qin and J.B. Bernstein, \u201cState of the Art Semiconductor Devices in Future Aerospace Systems,\u201d Proceedings of the FAA\/NASA\/DoD Joint Council on Aging Aircraft Conference, Palm Springs, CA (April 2007)<\/li>\n<li>M. Gurfinkel, J. Suehle, J.B. Bernstein, Yoram Shapira, A.J. Lelis, D. Habersat, N. Goldsman, \u201cUltra-fast Characterization of Transient Gate Oxide Trapping in SiC MOSFETs\u201d, Proc. of the IEEE International Reliability Physics Symposium 2007.<\/li>\n<li>J. Qin, X. Li, J.B. Bernstein, \u201cSRAM Stability Analysis Considering Gate Oxide SBD, NBTI and HCI,\u201d 2007 International Integrated Reliability Workshop (IIRW) Final Report, 2.2, (October 2007).<\/li>\n<li>M. Gurfinkel, et. al., \u201cCharacterization of Interface and Bulk Oxide Traps in SiC MOSFETs with Epitaxialy grown and implanted channels,\u201d 2007 International Integrated Reliability Workshop (IIRW) Final Report, 8.3 (October 2007).<\/li>\n<li>L. Yang, J.B. Bernstein, D. Gajewski and J. Walls, \u201cPredictive Reliability Assessment and Failure Rate Modeling for Electronic Packages,\u201d IMAPS 40th International Symposium on Microelectronics, Final Report, WA5 (November 2007).<\/li>\n<li>M. Gurfinkel, P. Livshits, A. Rozen, Y. Fefer, J.B. Bernstein, Y. Shapira, \u201cSupply signal fluctuations due to chip power grid resonance \u2014 a new reliability concern\u201d, Proc. of the IEEE International Reliability Physics Symposium, (April-May 2008)<\/li>\n<li>J. Qin, B. Yan, Y. Shoshany, R. Druker, H. Rahamim, H. Marom, J.B. Bernstein, \u201cStudy of Transistor and Product NBTI Lifetime Distributions (A),\u201d International Integrated Reliability Workshop (IIRW) Final Report, pp. 1-16  (October 2008)<\/li>\n<li>J. Qin, B. Yan, Y. Shoshany, R. Druker, H. Rahamim, H. Marom, J.B. Bernstein, \u201cStudy of Transistor and Product NBTI Lifetime Distributions (B),\u201d International Integrated Reliability Workshop (IIRW) Final Report, pp. 64-67  (October 2008)<\/li>\n<li>B. Yan, J. Qin,  J. Dai, Q. Fan, J.B. Bernstein, \u201cReliability Simulation and Design Consideration of High Speed ADC Circuits.\u201d International Integrated Reliability Workshop (IIRW) Final Report, pp. 125-128  (October 2008)<\/li>\n<li>J. Qin, M. White, J.B. Bernstein, \u201cA Study of Scaling Effect on DRAM Reliability,\u201d Annual Reliability and Maintainability Symposium (RAMS), Final Report, pp. 9C-4 (January 2011)<\/li>\n<li>J. Qin, A. Hava, J.B. Bernstein, \u201cFaRBS: a New PoF Based VLSI Reliability Prediction Method,\u201d Annual Reliability and Maintainability Symposium (RAMS), Final Report, pp. 9D-3 (January 2011)<\/li>\n<\/ol>\n","protected":false},"excerpt":{"rendered":"<p>Refereed Conference Proceedings (chronological order): Bernstein, J.B., Bahl, S., Schlecht, M.F., \u201cA Low Capacitance Power MOSFET With an Integral Gate Driver,&#8221; Proceeding of the 18th Annual IEEE Power Electronics Specialists Conference, PESC vol. 87, pp. 704, 61-8 (Virginia 1987) Cooke, C.M., Wright, K.A., Takasu, N., Bernstein, J.B., Gollin, E., \u201cCalibration of Volume Charge Measurements By &hellip; <a href=\"https:\/\/www.eng.biu.ac.il\/bernstj\/conferences\/\" class=\"more-link\">Continue reading <span class=\"screen-reader-text\">Conferences<\/span> <span class=\"meta-nav\">&rarr;<\/span><\/a><\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"onecolumn-page.php","meta":{"footnotes":""},"class_list":["post-37","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.eng.biu.ac.il\/bernstj\/wp-json\/wp\/v2\/pages\/37"}],"collection":[{"href":"https:\/\/www.eng.biu.ac.il\/bernstj\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.eng.biu.ac.il\/bernstj\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.eng.biu.ac.il\/bernstj\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.eng.biu.ac.il\/bernstj\/wp-json\/wp\/v2\/comments?post=37"}],"version-history":[{"count":4,"href":"https:\/\/www.eng.biu.ac.il\/bernstj\/wp-json\/wp\/v2\/pages\/37\/revisions"}],"predecessor-version":[{"id":42,"href":"https:\/\/www.eng.biu.ac.il\/bernstj\/wp-json\/wp\/v2\/pages\/37\/revisions\/42"}],"wp:attachment":[{"href":"https:\/\/www.eng.biu.ac.il\/bernstj\/wp-json\/wp\/v2\/media?parent=37"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}